Kalisz, M., and R. Mroczynski. “Ultra-Shallow Fluorine Implantation from r.f. Plasma As a Method for Improvement of Electro-Physical Properties of MIS Structures With PECVD Gate Dielectric Layers”. International Conference on Plasma Surface Engineering 2, no. 13 (March 4, 2013): 467–470. Accessed April 26, 2024. https://wcc.ep.liu.se/index.php/PSE/article/view/495.