Control of Deposition Profile and Properties of Plasma CVD Carbon Films
AbstractWe have succeeded to deposit anisotropic and top surface deposition profile on substrates with trenches using H-assisted plasma CVD of Ar + H2 + C7H8 at a low substrate temperature of 100 oC. For the anisotropic deposition profile, carbon is deposited without being deposited on side-wall of trenches. For the top surface deposition profile, carbon is deposited at only top surface. The optical emission measurements and evaluation of deposition rate have revealed that a high flux of H atmos is the key to the deposition profile control. The mass density of the films and their Raman spectrum have shown that their structure is a-C:H.
How to Cite
Koga K, Urakawa T, Uchida G, Kamataki K, Seo Y, Itagaki N, Shiratani M, Setsuhara Y, Sekine M, Hori M. Control of Deposition Profile and Properties of Plasma CVD Carbon Films. PSE [Internet]. 2013 Mar. 4 [cited 2021 Dec. 5];2(13):136-9. Available from: https://wcc.ep.liu.se/index.php/PSE/article/view/412
Session 18 - Carbon-Based Thin Films