Control of Deposition Profile and Properties of Plasma CVD Carbon Films
DOI:
https://doi.org/10.3384/wcc2.136-139Abstract
We have succeeded to deposit anisotropic and top surface deposition profile on substrates with trenches using H-assisted plasma CVD of Ar + H2 + C7H8 at a low substrate temperature of 100 oC. For the anisotropic deposition profile, carbon is deposited without being deposited on side-wall of trenches. For the top surface deposition profile, carbon is deposited at only top surface. The optical emission measurements and evaluation of deposition rate have revealed that a high flux of H atmos is the key to the deposition profile control. The mass density of the films and their Raman spectrum have shown that their structure is a-C:H.Downloads
Published
2013-03-04
How to Cite
1.
Koga K, Urakawa T, Uchida G, Kamataki K, Seo Y, Itagaki N, et al. Control of Deposition Profile and Properties of Plasma CVD Carbon Films. PSE [Internet]. 2013 Mar. 4 [cited 2025 Mar. 6];2(13):136-9. Available from: https://wcc.ep.liu.se/index.php/PSE/article/view/412
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Section
Session 18 - Carbon-Based Thin Films