Sensitization of Er3+ Emission in Er- and Yb-doped Si Thin Films by Laser Ablation

Authors

  • Shinji Kawai Industrial Technology Center of SAGA, Japan

DOI:

https://doi.org/10.3384/wcc2/184-187

Abstract

Erbium (Er)- and ytterbium (Yb)-doped Si (Si:Er,Yb) thin films have been controllably synthesized over the Er and Yb concentrations ranging from 1018 to 1020 cm-3 by laser ablation technique. From the PL spectra and the concentration dependence of the intensity of Er3+ emission at 1.54 µm, Yb3+ acts as an efficient sensitizer of the Er3+-related PL. Enhancement by a factor of 1.5 due to Yb codoping is observed from the Si:Er,Yb films.

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Published

2013-03-04

How to Cite

1.
Kawai S. Sensitization of Er3+ Emission in Er- and Yb-doped Si Thin Films by Laser Ablation. PSE [Internet]. 2013 Mar. 4 [cited 2021 Dec. 5];2(13):184-7. Available from: https://wcc.ep.liu.se/index.php/PSE/article/view/425