Silicon carbide surface micromachining using plasma ion etching of sacrificial layer

Authors

  • Norbert Kwietniewski Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Warsaw, Poland
  • Andy Zhang Acreo AB, Kista, Sweden
  • Jang-Kwon Lim Acreo AB, Kista, Sweden
  • Mietek Bakowski Acreo AB, Kista, Sweden
  • Mariusz Sochacki Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Warsaw, Poland
  • Jan Szmidt Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Warsaw, Poland

DOI:

https://doi.org/10.3384/wcc2.192-194

Abstract

Not available

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Published

2013-03-04

How to Cite

1.
Kwietniewski N, Zhang A, Lim J-K, Bakowski M, Sochacki M, Szmidt J. Silicon carbide surface micromachining using plasma ion etching of sacrificial layer. PSE [Internet]. 2013 Mar. 4 [cited 2024 Dec. 31];2(13):192-4. Available from: https://wcc.ep.liu.se/index.php/PSE/article/view/427

Issue

Vol. 2 No. 13 (2012): 13th International Conference on Plasma Surface Engineering September 10 - 14, 2012, in Garmisch-Partenkirchen, Germany

Section

Poster: Plasma and ion etching / surface cleaning