Plasma etching of aluminum nitride thin films prepared by magnetron sputtering method
DOI:
https://doi.org/10.3384/wcc2.211-214Abstract
Several properties of the AlN films as e.g., isomorphous crystallographic structure, high resistivity (~1013 O cm), high thermal stability (up to 2200 °C) and high thermal conductivity (~320 W/mK), make it excellent material for application in structure of HEMT, FET transistors, playing role of dielectric.However, reaching a level of considerable maturity by technology of any electronic material, requires not only adequate methods of its synthesis but also capabilities of material processing, among others availability of means of its selective etching.
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Veröffentlicht
2013-03-04
Zitationsvorschlag
1.
Firek P, Stonio B, Chodun R, Szmidt J, Zdunek K. Plasma etching of aluminum nitride thin films prepared by magnetron sputtering method. PSE [Internet]. 4. März 2013 [zitiert 3. Juli 2024];2(13):211-4. Verfügbar unter: https://wcc.ep.liu.se/index.php/PSE/article/view/432
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Rubrik
Poster: Plasma and ion etching / surface cleaning