Plasma etching of aluminum nitride thin films prepared by magnetron sputtering method

Authors

  • Piotr Firek Faculty of Materials Science and Engineering, Warsaw University of Technology, Warsaw, Poland
  • Bartlomiej Stonio Faculty of Materials Science and Engineering, Warsaw University of Technology, Warsaw, Poland
  • Rafal Chodun Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Warsaw, Poland
  • Jan Szmidt Faculty of Materials Science and Engineering, Warsaw University of Technology, Warsaw, Poland
  • Krzysztof Zdunek Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Warsaw, Poland

DOI:

https://doi.org/10.3384/wcc2/211-214

Abstract

Several properties of the AlN films as e.g., isomorphous crystallographic structure, high resistivity (~1013 O cm), high thermal stability (up to 2200 °C) and high thermal conductivity (~320 W/mK), make it excellent material for application in structure of HEMT, FET transistors, playing role of dielectric.

However, reaching a level of considerable maturity by technology of any electronic material, requires not only adequate methods of its synthesis but also capabilities of material processing, among others availability of means of its selective etching.

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Published

2013-03-04

How to Cite

1.
Firek P, Stonio B, Chodun R, Szmidt J, Zdunek K. Plasma etching of aluminum nitride thin films prepared by magnetron sputtering method. PSE [Internet]. 2013 Mar. 4 [cited 2021 Dec. 5];2(13):211-4. Available from: https://wcc.ep.liu.se/index.php/PSE/article/view/432