Thermal stability of TiZrAlN films deposited by a reactive magnetron sputtering method

Authors

  • G. Abadias Institut P’, Université de Poitiers-CNRS-ENSMA, FRANCE
  • I. A. Saladukhin Belarussian State University, Belarus
  • V.V. Uglov Belarussian State University, Belarus
  • S. V. Zlotski Belarussian State University, Belarus

DOI:

https://doi.org/10.3384/wcc2/424-426

Abstract

Quaternary TiZrAlN films are:

• perspective for both oxidation and wear resistance applications and expectant substitution for TiN, (Ti,Al)N and (Ti,Zr)N hard films;

• capable to possess by the unique properties due to possibility of nanocomposite structure formation during their synthesis.

The aim of the present work is to study the thermal stability, under vacuum and air annealing, of quaternary transition metal nitride films, namely (Ti,Zr)1-xAlxN, with emphasis on the role of Al content on the structure and phase formation.

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Published

2013-03-04

How to Cite

1.
Abadias G, Saladukhin IA, Uglov V, Zlotski SV. Thermal stability of TiZrAlN films deposited by a reactive magnetron sputtering method. PSE [Internet]. 2013 Mar. 4 [cited 2021 Dec. 9];2(13):424-6. Available from: https://wcc.ep.liu.se/index.php/PSE/article/view/484